Undergraduate Course On Semiconductor Device Physics-Ii

Undergraduate Course On Semiconductor Device Physics-Ii
Last updated 3/2022
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Quantitative & Qualitative analysis of MOS capacitor, MOSFET and BJT

What you’ll learn

MOS Capacitor quantitative analysis

MOSFET quantitative and Qualitative treatment

BJT analysis

Mathematical understanding

Requirements

My previous course- "Undergraduate course on semiconductor device physics-II"

Description

Overview

Section 1: MOS Capacitor

Lecture 1 Lesson-01 MOS Introduction

Lecture 2 Lesson-02 Energy band theory of MOS- Flat band condition

Lecture 3 Lesson-03 Work function difference & Electron affinity

Lecture 4 Lesson-04 Accumulation mode in energy bands

Lecture 5 Lesson-05 Depletion mode in energy bands

Lecture 6 Lesson-06 Inversion mode in energy bands

Lecture 7 Lesson-07 Inversion mode in energy band structure

Lecture 8 Lesson-08 Surface potential

Lecture 9 Lesson-09 On set of strong inversion

Lecture 10 Lesson-10 Surface potential-Summary

Lecture 11 Lesson-11 Maximum depletion width- Mathematical analysis

Lecture 12 Lesson-12 Ideal MOS curves- Charge density

Lecture 13 Lesson-13 Ideal MOS curves- Field intensity & Potential

Lecture 14 Lesson-14 MOS C-V characteristic curve-I

Lecture 15 Lesson-15 MOS C-V characteristic curve-II

Lecture 16 Lesson-16 MOS capacitor with n-substrate

Lecture 17 Lesson-17 Solved Example-01

Lecture 18 Lesson-18 Solved Example-02

Lecture 19 Lesson-19 Threshold voltage & Inversion charge

Lecture 20 Lesson-20 Non ideal conditions in MOS capacitor

Lecture 21 Lesson-21 Non zero work function difference

Lecture 22 Lesson-22 Oxide charges & Interface traps

Lecture 23 Lesson-23 Threshold voltage under non ideal conditions

Lecture 24 Lesson-24 Solved example-03

Lecture 25 Lesson-25 Solved example-04

Section 2: MOSFET

Lecture 26 Lesson-01 MOSFET- basic structure

Lecture 27 Lesson-02 Induced channel & Implanted channel

Lecture 28 Lesson-03 Threshold voltage for a MOSFET

Lecture 29 Lesson-04 MOSFET 3-D structure

Lecture 30 Lesson-05 MOSFET operation in linear region

Lecture 31 Lesson-06 MOSFET operation in saturation region

Lecture 32 Lesson-07 n-MOSFET characteristics

Lecture 33 Lesson-08 p-MOSFET characteristics

Lecture 34 Lesson-09 MOSFET current equation-I(derivation)

Lecture 35 Lesson-10 MOSFET current equation-II(derivation)

Lecture 36 Lesson-11 Output conductance & Transconductance

Lecture 37 Lesson-12 Channel length modulation

Lecture 38 Lesson-13 Threshold voltage

Lecture 39 Lesson-14 Threshold tailoring implant

Lecture 40 Lesson-15 Body bias effect

Lecture 41 Lesson-16 Oxide layer thickness

Section 3: Bipolar Junction Transistor(BJT)

Lecture 42 Lesson-01 BJT Introduction

Lecture 43 Lesson-02 BJT Basic operation

Lecture 44 Lesson-03 BJT Operation(Contd..)

Lecture 45 Lesson-04 BJT Operating regions

Lecture 46 Lesson-05 BJT Under thermal equilibrium

Lecture 47 Lesson-06 BJT in forward active region

Lecture 48 Lesson-07 BJT current components

Lecture 49 Lesson-08 BJT Common base current gain

Lecture 50 Lesson-09 solved example-01

Lecture 51 Lesson-10 Minority carrier distribution in BJT

Lecture 52 Lesson-11 Minority carrier concentration-Mathematical analysis

Lecture 53 Lesson-12 BJT current equations-I

Lecture 54 Lesson-13 BJT current equations-II

Lecture 55 Lesson-14 BJT emitter current- Mathematical expression

Lecture 56 Lesson-15 BJT collector and Base currents-Mathematical analysis

Lecture 57 Lesson-16 Emitter efficiency revisited

Lecture 58 Lesson-17 Solved example-02

Lecture 59 Lesson-18 Minority carrier distribution-I

Lecture 60 Lesson-19 Minority carrier distribution-II

Lecture 61 Lesson-20 Generalized current expressions

Lecture 62 Lesson-21 Ebers-moll model

Lecture 63 Lesson-22 Base width modulation or early effect

Lecture 64 Lesson-23 Transistor configurations

Lecture 65 Lesson-24 Common base configuration-Input characteristics

Lecture 66 Lesson-25 Common base configuration output characteristics

Lecture 67 Lesson-26 Common emitter configuration

Lecture 68 Lesson-27 CE configuration-Input characteristics

Lecture 69 Lesson-28 CE configuration-Output characteristics

Lecture 70 Lesson-29 BJT as an amplifier

Lecture 71 Lesson-30 Unity gain frequency and transit time

Lecture 72 Lesson-31 BJT as a switch

Lecture 73 Lesson-32 BJT switching action complete analysis
Lecture 74 Lesson-33 Early voltage

Lecture 75 Lesson-34 Breakdown mechanisms- punch through

Lecture 76 Lesson-35 Breakdown mechanism- Avalanche multiplication

Lecture 77 Lesson-36 Solved example-03

Lecture 78 Lesson-37 Solved example-04

Lecture 79 Lesson-38

Undergraduate students in electronics engineering, Communication engineering